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Word-line Batch Vth Modulation (WBVM) is proposed as a comprehensive solution for both write-hot and cold data to improve the reliability of Triple Level Cell (TLC) NAND Flash memories. For write-hot data, WBVM Vth score modulation decreases the program-disturb errors by 49% and enhances the endurance by 1.8-times of 2D-TLC NAND Flash. On the other hand, for write-cold data, WBVM BER score modulation...
An optimized asymmetric coding strategy is proposed to improve the reliability of the NAND flash memories. The previously reported asymmetric coding reduces the data-retention error by decreasing the population of the VTH state which has higher error rate, and is measured on 4×nm NAND flash memory [1]. In [2], by increasing the number of the lowest VTH state, the proposed asymmetric coding strategy...
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