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Items from 1 to 20 out of 148 results

article

Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

Alexey P. Gorshkov, Natalia S. Volkova, Leonid A. Istomin, Anton V. Zdoroveishev, more

Solid State Communications > 2016 > 240 > C > 20-23

The effects of indium composition and the thickness of the combined InGaAs/GaAs thin cap layer on the energy spectra and relative electron–hole alignment of InAs quantum dots (QDs) grown by metal organic vapor phase epitaxy (MOVPE) are investigated by photoelectrical spectroscopy in a semiconductor/electrolyte system. In structures with InAs QDs and an InGaAs strain reducing layer, the shift of the...

article

SmB6: Topological insulator or semiconductor with valence-fluctuation induced hopping transport?

I. Batko, M. Batkova

Solid State Communications > 2014 > 196 > C > 18-23

We advert to the fact that the presence of valence fluctuations (VFs) in semiconductors with in-gap impurity bands unconditionally leads to dynamical changes (fluctuations) of energies of localized impurity states. We provide arguments that in the impurity subnetwork consisting of centers having energy levels fluctuating around the Fermi energy there exist favorable conditions for hops from occupied...

article

The manifestation of Coulomb gap in photoluminescence of GaAs/AlGaAs quantum wells with positively charged acceptors

P.V. Petrov, Yu.L. Ivánov, N.S. Averkiev, A.Yu. Silov

Solid State Communications > 2012 > 152 > 24 > 2185-2188

We report results of photoluminescence and photoexcitation studies carried out on GaAs/AlGaAs quantum well structures with positively charged acceptors. We explain the observed spectral peculiarities by an appearance of the Coulomb gap. Another evidence of the Coulomb gap is an anomalously large Stocks shift which has been observed in our experiments.

article

Persistent Photoconductivity in electron-irradiated ZnO bulk single crystals: Evaluation of the metastable conductive state by the dual light illumination

T. Oga, Y. Izawa, K. Kuriyama, K. Kushida, more

Solid State Communications > 2011 > 151 > 22 > 1700-1703

Persistent Photoconductivity (PPC) in 30 MeV electron-irradiated n-type ZnO single crystals is studied under the dual light illumination (DLI: the infrared light excitation after the blue illumination). Below 160 K, the remarkable reduction in PPC is observed by the subsequent infrared illumination, suggesting the release of electrons from the perturbed-host state (PHS) as a metastable conductive...

article

An ab initio analysis of electronic states associated with a silicon vacancy in cubic symmetry

T. Ogawa, K. Tsuruta, H. Iyetomi

Solid State Communications > 2011 > 151 > 21 > 1605-1608

The electronic orbitals localized in the vicinity of a vacancy in a silicon crystal are calculated by an ab initio method based on the density functional theory and analyzed in association with the elastic softening observed by the recent ultrasonic experiments, especially focused on an estimate of the electric quadrupole moments. The localized orbitals due to the existence of a vacancy show largely...

article

Evolution from Kondo lattice to single-ion Kondo behaviour in Ce1−xLaxCu4Al system

M. Falkowski, A. Kowalczyk, T. Toliński

Solid State Communications > 2010 > 150 > 33-34 > 1548-1551

The magnetic susceptibility χ(T) and electrical resistivity ρ(T) of polycrystalline Ce _1−x La _x Cu ₄ Al (0.0≤x≤1.0) are presented. Magnetic ordering was not observed down to 2 K. The effective magnetic moment values obtained across the series are in fair agreement with the value 2.54μB/Ce that corresponds to a free Ce ³⁺ ion. Electrical resistivity studies illustrate...

article

A first-principles study on phase transition induced by charge ordering of Mn3+/Mn4+ in spinel LiMn2O4

Masanobu Nakayama, Masayuki Nogami

Solid State Communications > 2010 > 150 > 29-30 > 1329-1333

A first-order transition at 290 K in LiMn ₂ O ₄ with a cubic spinel-type structure is known to degrade the electrochemical performance of the positive electrode of rechargeable lithium-ion batteries. Using first-principles density functional theory (DFT), we confirm that the phase transition is induced by charge-ordering of Mn ³⁺ /Mn ⁴⁺ accompanied by orbital-ordering...

article

Localization properties of electronic states of one-dimensional Galois sequences

Ruonan Wan, Xiujun Fu

Solid State Communications > 2010 > 150 > 19-20 > 919-922

Galois sequences are aperiodic ordered structures, which have wide applications in many fields. In this paper, we study the electronic properties of the tight-binding model on Galois sequences. The energy spectra, wave functions and localization quantities are calculated. The results reveal that this model exhibits the Anderson localization feature.

article

Suppression of the singularly localized states in dimer quasiperiodic Fibonacci superlattices

Z. Aziz, S. Bentata, R. Djelti, Y. Sefir

Solid State Communications > 2010 > 150 > 17-18 > 865-869

Using the transfer-matrix technique, we have numerically investigated the effect of introducing the dimer on the nature of the states across Dimer Fibonacci semiconductor superlattices on the miniband structure of the GaAs/Al _x Ga _1−x As superlattices. By the introduction of the dimer model, the transmission spectra reveal the appearance of a miniband structure with a concomitant disappearance...

article

Spin-polarized transport and thermopower of organometallic nanocontacts

Volodymyr V. Maslyuk, Steven Achilles, Ingrid Mertig

Solid State Communications > 2010 > 150 > 11-12 > 505-509

We present a theoretical study of the length dependence of both conductance and thermopower of organometallic vanadium-benzene molecules (V _n Bz _n+1 ) sandwiched between magnetic Co(100) electrodes. We show that the molecules with n≥3 are efficient spin filters. Namely, we find that the zero bias conductance of the majority electrons is small and decays exponentially with increasing...

article

Electron-nuclear double resonance study of V4+ ions in V O2 crystals

P.H. Bunton, D.B. Baker, D.E. Engquist, M. Klemm, more

Solid State Communications > 2009 > 149 > 41-42 > 1818-1821

Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) are used to identify and characterize V ⁴⁺ ions in a bulk single crystal of vanadium dioxide (V O ₂ ). These S=1/2 defects are observed in the as-grown crystal because an adjacent nonmagnetic M ⁴⁺ impurity, e.g., a Si ⁴⁺ ion, has destroyed the normal antiferromagnetic coupling associated...

article

Infrared and Raman spectroscopic study of BDA-TTP [2,5-bis(1,3-dithian-2-ylidene)–1,3,4,6-tetrathiapentalene] and its charge-transfer salts

Mikio Uruichi, Chikako Nakano, Masayuki Tanaka, Kyuya Yakushi, more

Solid State Communications > 2008 > 147 > 11-12 > 484-489

Infrared and Raman spectra in the frequency range of 1200–1600 cm ⁻¹ were observed using BDA-TTP and (BDA-TTP)CuCl ₂ crystals. The C =C stretching and CH ₂ bending modes in this frequency region were assigned based on quantum chemical calculation of the normal modes by the density functional theory (DFT) method. The three C =C stretching modes of BDA-TTP showed a significant...

article

Electron paramagnetic resonance study of spin–spin correlation in iodine-doped poly(3-butylthiophene-2, 5-dyle)

Jae-Won Jang, Kyu Won Lee, E.M. Lee, Cheol Eui Lee

Solid State Communications > 2008 > 147 > 7-8 > 293-295

Spin dynamics in iodine-doped samples of a poly(thiophene) derivative, poly(3-butylthiophene-2, 5-dyle) (P3BT), was studied by temperature-dependent electron paramagnetic resonance (EPR) measurements. As a result, a change of behavior in the polaron spin–spin correlation was markedly identified in a heavily doped system.

article

CO adsorption on magnetic Co(0001) surface: A study of density functional theory

Shu-Hong Ma, Xiao-Tao Zu, Zhao-Yong Jiao

Solid State Communications > 2008 > 147 > 3-4 > 152-156

CO adsorption on a Co(0001) surface has been studied within ab initio density functional theory (DFT). As found experimentally, calculations confirm that CO adsorption on atop is the most favorable site at a CO coverage of 0.33 ML. The geometrical structure, vibrational and electronic structural properties are discussed in detail. Moreover, we find that the CO on atop quenches the magnetization of...

article

Excitation energy evolution of photoluminescence spectrum in amorphous hydrogenated silicon

Kazuro Murayama, Wataru Sano, Taichi Ito, Chisato Ogiwara

Solid State Communications > 2008 > 146 > 7-8 > 315-319

Photoluminescence peak energy at 15 K in amorphous hydrogenated silicon (a-Si:H), prepared at substrate temperatures (Ts=) 180–250 ^∘ C, increases with excitation energy in the excitation energy range lower than 1.52 eV in the Urbach tail region whilst for higher excitation energy range the peak energy is constant. The excitation energy at which the peak energy becomes constant is named the...

article

Normal-state Hall effect measurements for Tl0.8Hg0.2Ba2Ca2Cu3O9−δ substituted by Sm and Yb

R. Awad, A.I. Abou-Aly, I.H. Ibrahim, W. Abdeen

Solid State Communications > 2008 > 146 > 1-2 > 92-96

The normal-state Hall effect for Tl _0.8 Hg _0.2 Ba ₂ Ca _2−x R _x Cu ₃ O _9−δ , where R=Sm and Yb with 0≤x≤0.15, is measured above the superconducting transition temperature. The Hall coefficients RH, for all prepared samples, are positive and follow the Curie–Weiss temperature dependence type. Carrier-concentrations nH decrease as the substitution-content...

article

Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films

F. Alibart, O. Durand Drouhin, C. Debiemme-Chouvy, M. Benlahsen

Solid State Communications > 2008 > 145 > 7-8 > 392-396

Amorphous carbon nitride films (CNx) were grown by reactive radio-frequency (RF) magnetron sputtering of a high-purity graphite target in argon/nitrogen (Ar/N2) gas mixture. The total discharge pressure was 1 Pa and the total nitrogen partial pressure (NPP) in plasma was between 0 and 0.10%. The properties of films were determined using X-ray photoelectron spectroscopy (XPS), infrared absorption,...

article

Impurity–host interactions in Cr-substituted ZnSe

C. Tablero

Solid State Communications > 2007 > 143 > 8-9 > 399-402

The physics of charge-transfer processes in semiconductors is a challenging and longstanding problem. Focusing on Cr-substituted ZnSe semiconductors, important for optoelectronic and spintronic devices, several processes and their energetics are analysed using first-principles. In contrast to the properties exhibited by deep gap levels, our results for highly Cr doped ZnSe show small variations in...

article

Electronic properties of stacks of graphene layers

F. Guinea, A.H. Castro Neto, N.M.R. Peres

Solid State Communications > 2007 > 143 > 1-2 > 116-122

The electronic properties of stacks of graphene layers are reviewed. The Landau levels, and the role of stacking disorder are considered. Electron–electron interactions are also analysed, and it is shown that, near the neutrality point, they can change significantly the ground state properties. The screening of external fields, and the charge distribution among the different planes, is determined...

article

Mobility-independent doping in crystalline rubrene field-effect transistors

Woo-young So, J. Magnus Wikberg, David V. Lang, Oleg Mitrofanov, more

Solid State Communications > 2007 > 142 > 9 > 483-486

We report doping effects in an organic semiconductor, crystalline rubrene. Oxygen-related states are introduced (removed) by annealing in oxygen (vacuum), at an elevated temperature. Room temperature stability is found in the resulting effects: (1) about two orders of magnitude increase in carrier density at equilibrium, (2) significant modification of threshold voltages, and (3) an unchanged field-effect...

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Keywords

D. ELECTRONIC STATES (LOCALIZED) (148)
A. SEMICONDUCTORS (56)
A. NANOSTRUCTURES (26)
C. IMPURITIES IN SEMICONDUCTORS (21)
D. OPTICAL PROPERTIES (19)
D. ELECTRONIC TRANSPORT (15)
E. PHOTOELECTRON SPECTROSCOPIES (14)
A. MAGNETICALLY ORDERED MATERIALS (13)
A. QUANTUM WELLS (12)
A. SURFACES AND INTERFACES (12)
D. ELECTRONIC BAND STRUCTURE (12)
C. POINT DEFECTS (11)
A. DISORDERED SYSTEMS (10)
E. LUMINESCENCE (10)
A. THIN FILMS (7)
D. PHASE TRANSITIONS (7)
D. RECOMBINATION AND TRAPPING (7)
E. SYNCHROTRON RADIATION (7)
A. METALS (6)
C. CRYSTAL STRUCTURE AND SYMMETRY (6)
D. ELECTRON-ELECTRON INTERACTIONS (6)
E. LIGHT ABSORPTION AND REFLECTION (6)
A. HIGH-T C SUPERCONDUCTORS (5)
D. EXCHANGE AND SUPEREXCHANGE (5)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.55.EQ (5)
A. HETEROJUNCTIONS (4)
A. INSULATORS (4)
D. PHOTOCONDUCTIVITY AND PHOTOVOLTAICS (4)
D. SPIN-ORBIT EFFECTS (4)
E. ELECTRON PARAMAGNETIC RESONANCE (4)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.20.DX (4)
A. ORGANIC CRYSTALS (3)
A. SEMICONDUCTOR (3)
B. EPITAXY (3)
C. X-RAY SCATTERING (3)
D. QUANTUM LOCALIZATION (3)
D. SPIN DYNAMICS (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.23.AN (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.20.-R (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.66.-W (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.66.DB (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.70.DM (3)
A. DISORDERED SYSTEM (2)
A. FERROELECTRICS (2)
A. FULLERENES (2)
A. HIGH-TC SUPERCONDUCTORS (2)
A. INSULATOR (2)
A. POLYMERS, ELASTOMERS, AND PLASTICS (2)
C. SCANNING TUNNELING MICROSCOPY (2)
D. CRYSTAL AND LIGAND FIELDS (2)
D. DIELECTRIC RESPONSE (2)
D. ELECTRON-ELECTRON INTERACTION (2)
D. ELECTRON-PHONON INTERACTIONS (2)
D. ELECTRON–ELECTRON INTERACTIONS (2)
D. RADIATION EFFECTS (2)
D. VALENCE FLUCTUATIONS (2)
E. HIGH PRESSURE (2)
E. INELASTIC LIGHT SCATTERING (2)
E. ULTRASONICS (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.15.AP (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.15.MB (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.24.+Q (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.28.+D (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 71.55 (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 72.20 (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.20.AT (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.23.-B (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.23.RA (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.40.Q (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 73.90.+F (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 75.10.LP (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 75.20.-G (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 75.25.+Z (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.20.-E (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.30.FS (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.55.MB (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 78.70.EN (2)
A. ACTINIDES (1)
A. AMORPHOUS SEMICONDUCTORS (1)
A. DIELECTRIC PROPERTIES (1)
A. MAGNETIC FILMS AND MULTILAYERS (1)
A. METAL (1)
A. METAL/SEMICONDUCTOR CONTACTS (1)
A. SUPERCONDUCTORS (1)
A. SURFACE AND INTERFACE (1)
A. SURFACE AND INTERFACES (1)
A. THIN FILM (1)
B. CHEMICAL SYNTHESIS (1)
B. NANOFABRICATIONS (1)
C. DISLOCATIONS AND DISCLINATIONS (1)
C. POINTS DEFECTS (1)
C. SCANNING TUNNELLING MICROSCOPY (1)
D. ADSORPTION (1)
D. ELASTICITY (1)
D. ELECTRONIC STRUCTURE (1)
D. ELECTRON–PHONON INTERACTIONS (1)
D. HALL EFFECT (1)
D. HEAT CAPACITY (1)
D. HEAVY FERMIONS (1)
D. HEAVY FERMIONS SITIONS (1)
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Investigation of the energy spectra and the electron–hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer

SmB6: Topological insulator or semiconductor with valence-fluctuation induced hopping transport?

The manifestation of Coulomb gap in photoluminescence of GaAs/AlGaAs quantum wells with positively charged acceptors

Persistent Photoconductivity in electron-irradiated ZnO bulk single crystals: Evaluation of the metastable conductive state by the dual light illumination

An ab initio analysis of electronic states associated with a silicon vacancy in cubic symmetry

Evolution from Kondo lattice to single-ion Kondo behaviour in Ce1−xLaxCu4Al system

A first-principles study on phase transition induced by charge ordering of Mn3+/Mn4+ in spinel LiMn2O4

Localization properties of electronic states of one-dimensional Galois sequences

Suppression of the singularly localized states in dimer quasiperiodic Fibonacci superlattices

Spin-polarized transport and thermopower of organometallic nanocontacts

Electron-nuclear double resonance study of V4+ ions in V O2 crystals

Infrared and Raman spectroscopic study of BDA-TTP [2,5-bis(1,3-dithian-2-ylidene)–1,3,4,6-tetrathiapentalene] and its charge-transfer salts

Electron paramagnetic resonance study of spin–spin correlation in iodine-doped poly(3-butylthiophene-2, 5-dyle)

CO adsorption on magnetic Co(0001) surface: A study of density functional theory

Excitation energy evolution of photoluminescence spectrum in amorphous hydrogenated silicon

Normal-state Hall effect measurements for Tl0.8Hg0.2Ba2Ca2Cu3O9−δ substituted by Sm and Yb

Relationship between the structure and the optical and electrical properties of reactively sputtered carbon nitride films

Impurity–host interactions in Cr-substituted ZnSe

Electronic properties of stacks of graphene layers

Mobility-independent doping in crystalline rubrene field-effect transistors

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