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Cu(In,Ga)Se2 (CIGS) solar cells based on Cu‐rich instead of Cu‐poor absorbers are investigated. Despite superior bulk transport properties and lower defect density, Cu‐rich CIGS performances are strongly reduced due to unfavorable features at the grain boundaries and CIGS/CdS interface. A very thin (<10 nm) gallium post‐deposition treatment followed by an annealing step is used to solve these...
We investigate the role of carrier distribution inside the i-region in the photocurrent collection mechanism of p-i-n quantum well solar cells. The device simulation indicates that the increment of Shockley-Read-Hall recombination after illumination strongly depends on the type of photocarriers and i-region majority carriers. As a result, a solar cell with n-type background doping results in efficient...
In this work, a low cost passivated back-contact for ultra-thin Cu(In, Ga)Se2-based (CIGS) solar cells to improve the carrier collection is developed. The current loss due to rear-interface recombination was first estimated with an accurate opto-electrical model. We compared the use of a sol-gel TiO2 and an ALD-Al2O3 layer for the back-contact passivation. 400–420 nm CIGS cells were fabricated on...
The effects of MoO3 thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV (poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3 (0, 5 nm)/Ag hybrid solar cells are investigated by capacitance–voltage measurement under dark and light illumination conditions. The efficiency of charge carrier injection and extraction is enhanced by inserting...
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