The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
As technology nodes become smaller it is getting more important to control all aspects of influencing parameters on the deposition of thin films using a CVD process. It is well known that physical parameters like gas flow or temperature heavily influence the deposition rate and the quality/properties of the deposited thin films. To achieve good chamber to chamber matching of the deposition rate and...
As technology nodes become smaller it is getting more important to control all aspects of influencing parameters on the deposition of thin films using a CVD process. It is well known that physical parameters like gas flow or temperature heavily influence the deposition rate and the quality/properties of the deposited thin films. To achieve good chamber to chamber matching of the deposition rate and...
Copper topography control during the IC fabrication process is a critical process step as it maintains global planarity across the wafer. Die to die variations in Cu thickness occur during copper deposition and removal process at various metal levels. In this work, the challenges associated with obtaining good process control of Cu thickness using Metapulse tools is discussed. The stability and accuracy...
Tilt of the shallow trench isolation on the wafer edge with the radial signature is a known issue for all technology nodes. Presence of this tilt was proven by cross-sectional TEM measurements. For advanced nodes, starting from 28 nm, this tilt becomes one of the crucial yield-killer strongly influencing the performance of the edge dies. If this tilt is not corrected for, overlay values of all FEOL...
The following topics are dealt with: advanced semiconductor manufacturing; wafer processing and manufacturing; defect inspection; advanced process control; design for manufacturability and lithography; contamination free manufacturing; reducing cost and maximizing equipment productivity; advanced processes and materials; yield enhancement/methodologies; fab optimization; and advanced metrology.
The following topics are dealt with: advanced metrology; lithography; advanced processes and materials; factory automation and factory dynamics; advanced process control; cleaning and surface preparation; defect inspection; human resources development; yield and productivity concerns; cost reduction, equipment reliability and productivity; yield enhancements and yield modeling
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.