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A novel in-plane bandgap energy controlling technique by ultra-low pressure (22mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP–InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned...