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Items from 1 to 20 out of 48 results

article

Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor

J. Jeschke, A. Knauer, M. Weyers

Journal of Crystal Growth > 2018 > 483 > C > 297-300

The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al_0.7Ga_0.3N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/III ratio, Si concentrations of below1 × 10¹⁶ up to 4 × 10¹⁷ cm⁻³ were measured. Potential Si sources are discussed and, by comparing samples grown in a SiC...

article

Increase in silicon film deposition rate in a SiHCl3-SiHx-H2 system

Ayumi Saito, Ayumi Sakurai, Hitoshi Habuka

Journal of Crystal Growth > 2017 > 468 > C > 204-207

The silicon film deposition rate at 850°C using trichlorosilane gas was increased by adding SiH_x gas which was in situ produced by the thermal decomposition of monomethylsilane gas in ambient hydrogen. With the increasing monomethylsilane gas concentration, the amounts of the chlorosilanes in the gas phase and the by-product deposited at the exhaust decreased. The influence of CH_x on the deposition...

article

Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(100) substrates with As cap

Shahram Seyedmohammadi, Michael J. DiNezza, Shi Liu, Paul King, more

Journal of Crystal Growth > 2015 > 425 > C > 181-185

Molecular beam epitaxial growth on CdTe substrates is challenging since the CdTe film crystalline and optical quality is limited by residual defects including threading dislocations and stacking faults. This remains an obstacle in spite of exhausting variables including pre-growth substrate preparation as well as epitaxial growth conditions including thermal oxide desorption, growth temperature, and...

article

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

M.T. Hardy, D.F. Storm, N. Nepal, D.S. Katzer, more

Journal of Crystal Growth > 2015 > 425 > C > 119-124

N-polar InAlN thin films were grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates under N-rich conditions. Indium and aluminum fluxes were varied independently at substrate temperatures below and above the onset of thermal desorption of indium. At low temperatures, the InAlN composition and growth rate are determined by the group-III fluxes. With increasing substrate temperature,...

article

Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system

Kiyoshi Kanisawa

Journal of Crystal Growth > 2014 > 401 > C > 381-387

Thermal desorption flux of cation adatoms is modeled in the context of the transition state theory. The model, on the basis of thermally excited electron tunneling to surface adatoms, suggests that the rate of phonon-stimulated electronic transition (In⁺ + e⁻ → In⁰) by tunneling is essential to explain the desorption flux at the InAs surface. The adatom thermal desorption is electronic in nature....

article

Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxy

H. Tambo, H. Asahi

Journal of Crystal Growth > 2013 > 383 > Complete > 57-62

Step-by-step change of growth temperature was investigated to control GaN nanorod diameter in the molecular-beam epitaxy. It was found that when the growth temperature is decreased, the GaN nanorod diameter gradually increases with the progress of lower temperature growth. On the contrary, opposite change of the diameter was observed when the growth temperature is increased during nanorod growth....

article

Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayers

H. Hirama, M. Hayakawa, T. Okoshi, M. Sakai, more

Journal of Crystal Growth > 2013 > 378 > Complete > 356-360

To reduce the hydrogen pressure and onset temperature for formation of the trihydrides of Y and Gd, we used Ni as a catalytic layer. The Y and Gd films capped with the Ni layer, which were grown by electron beam evaporation method, were hydrogenated in H ₂ pressure less than ∼3×103Pa, which is fairly lower than conventional pressures (∼1×106Pa) used for hydrogen absorption in Y and Gd. The...

article

Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface

Kiyoshi Kanisawa

Journal of Crystal Growth > 2013 > 378 > Complete > 8-12

Indium adatoms remaining at the InAs(111)A surface after molecular beam epitaxy were characterized by a low-temperature scanning tunneling microscope at 5K. The resonance spectrum of the adatom orbital was analyzed including the tip-induced line width broadening effect. The energy difference between the resonance level and surface Fermi level was estimated to be 0.79eV at 420°C, which is equivalent...

article

Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy

S. Hasegawa, T. Shimoi, H. Asahi

Journal of Crystal Growth > 2013 > 378 > Complete > 47-49

X-ray photoemission spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED) have been used to investigate the initial stages of InP growth on H-terminated Si and native Si oxide surfaces. By annealing at 800°C, the H-terminated Si surface exhibits a (2×1) RHEED pattern while the native oxide surface just shows a halo RHEED pattern. After exposing them to P ₂ flux, the Si(2×1)...

article

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

M. Sawicka, C. Chèze, H. Turski, J. Smalc-Koziorowska, more

Journal of Crystal Growth > 2013 > 377 > Complete > 184-191

The growth of multiquantum well (MQW) AlGaN/GaN structures was carried out by plasma assisted molecular beam epitaxy simultaneously on semipolar (202¯1), m-plane (101¯0) and c-plane (0001) GaN substrates under nitrogen-rich (N-rich) conditions in order to investigate the growth mechanisms on different crystal surfaces. A smooth surface with atomic steps was found only for the semipolar (202¯1) structure...

article

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

V.N. Jmerik, A.M. Mizerov, D.V. Nechaev, P.A. Aseev, more

Journal of Crystal Growth > 2012 > 354 > 1 > 188-192

Low-temperature (<750°C) growth of thick AlN epilayers on c-sapphire by plasma-assisted molecular-beam epitaxy under the Al-rich conditions (F _Al /F _N⁎ <1.4) is reported here. Short periodic Al-flux interruptions controlled precisely by laser reflectometry ensure continuous growth of droplet-free and atomically smooth AlN films (rms<2ML over 4μm ² ) with a growth rate...

article

Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growth

M. Vahidi, Z.Z. Tang, J. Tucker, T.J. Peshek, more

Journal of Crystal Growth > 2012 > 338 > 1 > 267-271

To understand the thermochemistry and determine the rate limiting steps of ZnGeAs ₂ thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05eV and an evaporation coefficient...

article

Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux

Mahesh Kumar, Mohana K. Rajpalke, Basanta Roul, Thirumaleshwara N. Bhat, more

Journal of Crystal Growth > 2011 > 327 > 1 > 272-275

The removal of native oxide from Si (111) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles. Two different oxide removal methods, performed under ultrahigh-vacuum (UHV) conditions, were carried out and compared. The first cleaning method is thermal desorption of oxide at 900°C. The second method is the deposition of metallic gallium...

article

Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide

Moïra Hocevar, Gilles Patriarche, Abdelkader Souifi, Michel Gendry

Journal of Crystal Growth > 2011 > 321 > 1 > 1-7

We report on InAs nanocrystals (nc-InAs) grown on silicon dioxide (SiO ₂ ) by solid-source molecular beam epitaxy. We show that the growth parameters influence the properties of the nc-InAs in terms of density, size, and crystallinity. The growth temperature influences mainly the density of the nc-InAs, whereas their size can be controlled by the number of deposited InAs monolayers. Using...

article

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

B. Vincent, R. Loo, W. Vandervorst, G. Brammertz, more

Journal of Crystal Growth > 2010 > 312 > 19 > 2671-2676

Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700°C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600–650 and 500°C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5Å/min). Trisilane...

article

Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

Hyunseok Na

Journal of Crystal Growth > 2010 > 312 > 12-13 > 2019-2024

GaNAs layers were grown on 3μm-thick GaN epilayers with tertiarybutylarsine (TBA) for As incorporation. It was found that surface of even 2nm-thick GaNAs was already granular on step-flow pattern of GaN template, which means that GaNAs growth mode was three-dimensional from the beginning. As incorporation in GaN was mainly determined by NH ₃ decomposition and As desorption. NH ₃ decomposition...

article

In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP

Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, Masakazu Sugiyama

Journal of Crystal Growth > 2010 > 312 > 8 > 1359-1363

In situ anti-oxidation treatment after the growth of GaAs is essential for an ideal interface between GaAs and an Al ₂ O ₃ gate dielectric, because the arsenic oxide is a major origin of interface states. The growth of AlP epitaxial layer on the top of GaAs was proposed as a novel anti-oxidation passivation method. The AlP layer almost converted to Al ₂ O ₃ upon air...

article

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

A. Gouyé, O. Kermarrec, A. Halimaoui, Y. Campidelli, more

Journal of Crystal Growth > 2009 > 311 > 13 > 3522-3527

Si homo-epitaxial growth by low-temperature reduced pressure chemical vapor deposition (RPCVD) using trisilane (Si ₃ H ₈ ) has been investigated. The CVD growth of Si films from trisilane and silane on Si substrates are compared at temperatures between 500 and 950°C. It is demonstrated that trisilane efficiency increases versus silane's one as the surface temperature decreases. Si...

article

Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere

Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, more

Journal of Crystal Growth > 2009 > 311 > 10 > 3103-3105

The activation energies for Ga and N desorption from a GaN surface were calculated using the density functional theory to understand the detailed decomposition process of the hydrogen terminated GaN(0001) Ga and N surfaces under a hydrogen atmosphere. It was found that the Ga atoms on the hydrogen terminated GaN(0001) Ga surface desorbed as GaH molecules from the surface while the N atoms on the hydrogen...

article

Flow modulation effect on N incorporation into GaAs(1−x)Nx films during chemical beam epitaxy growth

H. Suzuki, K. Nishimura, K. Saito, Y. Ohshita, more

Journal of Crystal Growth > 2009 > 311 > 10 > 2821-2824

The change in the surface concentration of N ([N]s) on a GaAs surface under N and As source injections is investigated using the N atomic layer doping (N-ALD) technique, and the key factor determining [N]s is discussed. The As and N precursors source gases are trisdimethylaminoarsenic (TDMAAs, [N(CH3)2]3As) and monomethylhydrazine (MMHy, N2H3CH3), respectively. N-ALD layers are prepared by using two...

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Keywords

A1. DESORPTION (48)
B1. NITRIDES (18)
A3. MOLECULAR BEAM EPITAXY (17)
A1. ADSORPTION (16)
A1. GROWTH MODELS (9)
A1. SURFACE PROCESSES (9)
A1. COMPUTER SIMULATION (7)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 81.05.EA (6)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 81.15.GH (6)
A1. NUCLEATION (5)
A3. METALORGANIC VAPOR PHASE EPITAXY (5)
B2. SEMICONDUCTING III–V MATERIALS (5)
A1. SURFACES (4)
A1. CRYSTAL MORPHOLOGY (3)
A1. CRYSTAL STRUCTURE (3)
A1. DEFECTS (3)
A1. DIFFUSION (3)
A1. NANOSTRUCTURES (3)
A1. SEGREGATION (3)
A3. CHEMICAL VAPOR DEPOSITION PROCESSES (3)
A3. METALORGANIC CHEMICAL VAPOR DEPOSITION (3)
A3. VAPOR PHASE EPITAXY (3)
B2. SEMICONDUCTING GALLIUM COMPOUNDS (3)
B2. SEMICONDUCTING III-V MATERIALS (3)
B2. SEMICONDUCTING II–VI MATERIALS (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 81.10.AJ (3)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 81.15.HI (3)
A1. DECOMPOSITION (2)
A1. RECRYSTALLIZATION (2)
A1. REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (2)
A3. MIGRATION ENHANCED EPITAXY (2)
B1. ANTIMONIDES (2)
B1. GALLIUM NITRIDE (2)
B1. OXIDES (2)
B2. SEMICONDUCTING INDIUM COMPOUNDS (2)
B2. SEMICONDUCTING SILICON (2)
B2. SEMICONDUCTING TERNARY COMPOUNDS (2)
B3. SOLAR CELLS (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 61.14.HG (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 68.45.DA (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 68.55 (2)
[PHYSICAL ASTRONOMY CLASSIFICATION SCHEME] 81.15.KK (2)
A1. ATOMIC FORCE MICROSCOPY (1)
A1. CHARACTERIZATION (1)
A1. DOPING (1)
A1. GRAIN SIZE (1)
A1. GROWTH (1)
A1. GROWTH MODEL (1)
A1. IMPURITIES (1)
A1. INTERFACES (1)
A1. KINETICS (1)
A1. NANOCRYSTALS (1)
A1. OES (1)
A1. OPTICAL REFLECTANCE (1)
A1. OPTICAL SPECTROSCOPY (1)
A1. POINT DEFECTS (1)
A1. SCANNING TUNNELING MICROSCOPE (1)
A1. STRESS (1)
A1. STRESSES (1)
A1. SUBSTRATES (1)
A1. SURFACE (1)
A1. SURFACE MORPHOLOGY (1)
A1. SURFACE STRUCTURE (1)
A1. THERMODYNAMICS (1)
A1. X-RAY DIFFRACTION (1)
A1. X-RAY PHOTOELECTRON SPECTROSCOPY (1)
A1.GROWTH MODELS (1)
A2. VAPOR PHASE EPITAXY (1)
A3. ATOMIC LAYER EPITAXY (1)
A3. CHEMICAL BEAM EPITAXY (1)
A3. CHEMICAL VAPOR DEPOSITION PROCESS (1)
A3. ECR–MBE (1)
A3. HYDRIDE VAPOUR PHASE EPITAXY (1)
A3. IN SITU REFLECTIVITY MONITORING (1)
A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (1)
A3. METAL-ORGANIC VAPOR-PHASE EPITAXY (1)
A3. METALORGANIC VAPOUR PHASE EPITAXY (1)
A3. METAL–ORGANIC VAPOR-PHASE EPITAXY (1)
A3. ORGANOMETALLIC VAPOR PHASE EPITAXY (1)
A3. PHYSICAL VAPOR DEPOSITION PROCESS (1)
A3. QUANTUM WELLS (1)
A3. SELECTIVE EPITAXY (1)
A3. THIN FILM (1)
B1. GAAS (1)
B1. GADOLINIUM COMPOUND (1)
B1. GERMANIUM SILICON ALLOYS (1)
B1. GROUP III NITRIDES (1)
B1. PHOSPHIDES (1)
B1. SILICON DIOXIDE (1)
B1. YTTRIUM COMPOUND (1)
B1. ZINC COMPOUNDS (1)
B2. CALCITE (1)
B2. HYDROGEN STORAGE MATERIALS (1)
B2. INN (1)
B2. PHOSPHORS (1)
B2. PIEZOELECTRIC MATERIALS (1)
B2. SEMICONDUCTING ALUMINUM COMPOUNDS (1)
B2. SEMICONDUCTING GALLIUM ARSENIDE (1)
B2. SEMICONDUCTING III–V MATERIAL (1)
B2. SEMICONDUCTING INDIUM PHOSPHIDE (1)
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Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor

Increase in silicon film deposition rate in a SiHCl3-SiHx-H2 system

Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(100) substrates with As cap

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system

Control of GaN nanorod diameter by changing growth temperature during molecular-beam epitaxy

Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayers

Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface

Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy

Growth mechanisms in semipolar (202¯1) and nonpolar m-plane (101¯0) AlGaN/GaN structures grown by PAMBE under N-rich conditions

Growth of thick AlN epilayers with droplet-free and atomically smooth surface by plasma-assisted molecular beam epitaxy using laser reflectometry monitoring

Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growth

Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux

Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

Arsenic incorporation in GaN layers grown by metalorganic chemical vapor deposition

In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere

Flow modulation effect on N incorporation into GaAs(1−x)Nx films during chemical beam epitaxy growth

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