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The present slate of SiC power Schottky barrier diode (SBR) is presented in this paper. 4H-SIC SBD is modeled using a self-consistent model. The model is based on the solution of semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface SiO2/SiC; effective oxide charge at the interfacial layer included...
The authors fabricated the 4H-SiC Schottky barrier diodes (SBDs) with the epilayers grown using the MOCVD. Bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) was used as a single precursor for Si and C sources.
A new high voltage 4H-SiC Schottky barrier diode (SBD) structure for monolithic microwave integrated circuit (MMIC) applications is proposed. It employs one or more floating metal rings (FMRs) which work similar to guard rings. Influence of FMRs structure on the breakdown voltage and cut-off frequencies of the SBD were studied by numerical device modeling. As compared to the one without ring, about...
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