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Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is that it can easily be integrated within existing technologies to handle a wide range of operating voltages without significant process changes. Because of the high voltages applied to the N-LDMOS device...
Automotive and telecom applications often require voltages in the 20-30V range. These circuits combine high performance CMOS with a high voltage MOS transistor. A possible choice for the high voltage device is an n-channel lateral DMOS transistor (NLDMOS). An advantage of an NLDMOS transistor is that it can be easily integrated within existing technologies without significant process changes. In most...
Automotive and telecom applications often require voltages in the 20-30 V range. These circuits combine high-performance CMOS with a high-voltage MOS transistor. A possible choice for the high-voltage device is an n-channel lateral DMOS (NLDMOS) transistor. An advantage of an NLDMOS transistor is that it can be easily integrated within existing technologies without significant process changes. In...
Summary form only given. We successfully demonstrated the fabrication of an index-guided channel-waveguide structure with an organic electroluminescent thin film. We showed electroluminescence in poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH:PPV) layers that are thick enough to support confined waveguide modes by applying somewhat higher voltages (20-30 V) compared with thin-film...
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