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Like all the ternary alloys in III-nitride materials family, aluminum gallium nitride (AlGaN) has unique band gap tuning property which enables the alloy to be suitable for many opto-electronic applications. The direct band gap of AlGaN can be tuned from 3.4 to 6.2 eV by changing the composition. In this article, the growth of ternary n-AlGaN micro and nano structures on Si (1 1 1) substrate is demonstrated...
Lithium niobate (LiNbO 3 ) epitaxial thin films of high crystalline quality have been grown on c-plane sapphire substrates by the solid-source MOCVD method. For waveguiding applications, low optical propagation losses (less than 2dB/cm) are required, and this has been difficult to achieve in films grown by various vapor growth techniques. Since scattering from rough film surfaces is a major...
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