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This paper describes a dual recess 0.15-μm gate length pseudomorphic high electron mobility transistor (pHEMT) technology for multi-function MMIC applications at microwave and millimeter-wave frequencies. This 0.15-μm power pHEMT not only produces high efficiency power amplification at Ka- and Q-band but also exhibits excellent noise and third-order-intercept (TOI) performance. At 35 GHz, output power...
A highly linear low noise amplifier (LNA) has been implemented in a standard digital 90nm CMOS process. At 880MHz the amplifier provides a forward power gain (S21) of 14.5dB with a supply voltage of 1.4V and a current consumption of 8.3mA. The noise figure was measured to be 1.0dB and the input third order intercept point (IP3) is +7.9dBm. Two lower gain modes have also been implemented; one with...
Marked low-loss coupling between a laser diode and a single-mode fibre has been realised, utilising a planoconvex, high-numerical-aperture graded-index rod lens with greatly improved small wavefront aberration.
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