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We report the Raman, continuous-wave (CW), and time-resolved photoluminescence (PL) measurements in a series of multilayer Si/Si1-xGex samples with an island-like morphology and precise control over the chemical composition in the range of 0.096 les x les 0.61. In the samples with x continuously increasing from 0.096 to 0.55, an increase in the intensity of the Raman signal related to the Ge-Ge vibrations...
This paper discusses engineering of ultra-shallow junctions using a new annealing technique called Flash-assist RTP/sup TM/ (fRTP). This technique offers effective process times in the 1-10 ms range, which fills the gap between traditional RTP and laser thermal processing. A discussion on the evolution of RTP based on the thermal response time of the heat source and wafer is presented. Technical innovations...
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