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We have demonstrated oxidation of the spatially controlled atomically flat Si(001) surface by exposing O 2 gas, and investigated morphologies of the SiO 2 surface and the SiO 2 /Si(001) interface using atomic force microscopy. When the O 2 pressure was low at high substrate temperatures (>400 o C), anisotropic surface etching occurred. Monoatomic-deep pits...
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