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Subwavelength horizontal Al/SiO2/Si/SiO2/Al plasmonic slot waveguides with SiO2 width at each side of ~15 nm and Si width of ~136, ~87, and ~43 nm are fabricated on SOI substrates using fully CMOS compatible processes. The propagation losses at 1550 nm TE are ~1.01, ~1.31, and ~1.56 dB/μm, respectively, as measured by the standard cutback method. A simple taper coupler with length of ~0.3-1 μm provides...
We describe planar air-core waveguides with Bragg reflector claddings, fabricated by controlled delamination and buckling of sputtered Si/SiO2 multilayers. We also report preliminary light guiding experiments in the 1550 nm wavelength range.
We present a novel 4-port optical switch which enables three connection states. The device consists of two Si-wire cross-bar switches, one oriented at right angles to the other. The three-way switching operation is demonstrated at the wavelength of 1550 nm.
We report the first demonstration of a waveguide-integrated avalanche photodetector using Group-IV heterostructure materials. Such device achieved a responsivity of ~0.8 A/W at unity gain and an impressive gain-bandwidth product of ~105 GHz at 1550 nm photon wavelength.
Photodetecctors using Si, Ge and other group IV alloys are of current interest for use at telecommunication wavelength 1550 nm. We have presented in this paper our work on resonant cavity enhanced (RCE) Si/SiGe multiple Quantum Well (MQW) and Ge Schottky photodetectors. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors...
We have identified at least five different local breakdown mechanisms according to the temperature coefficient (TC) and slope of their characteristics and electroluminescence (EL) under reverse bias. These are (1) early pre-breakdown (strongly negative TC, low slope), (2) edge breakdown (positive TC, low slope, no EL), (3) weak defect-induced breakdown (zero or weakly negative TC, moderate slope,...
High speed vertical-cavity-surface-emitting lasers (VCSELs) are attractive candidates for use in future wavelength division multiplexed passive optical network (WDM-PON). In this paper we describe a proof-of principle implementation of such a remodulation scheme with a directly modulated VCSEL array. Although a discrete receiver, VCSEL array and wavelength filters were used here for implementing the...
We propose and analyze 3- and 5-layer sub-wavelength silicon-based plasmonic waveguide switches. Above-bandgap femtosecond pump pulses are used to modulate 1550 nm signals with switching time ~5 ps and high on/off contrast ratio of 23 dB.
We report the measurement of free-carrier nonlinearities in nanoporous silicon waveguides at 1550 nm. Although the waveguide is approximately 70% porous, it exhibits stronger and faster free-carrier effects than those of crystalline silicon waveguides.
The nonlinear refractive index of Silicon nanocrystals was measured by the z-scan technique. The results were used to estimate the magnitude of the self-phase modulation (SPM) effect in slot waveguide structures filled by Silicon nanocrystals.
Ge waveguide photodetectors with dimension of 7.4 mum times 50 mum and 4.4 mum times 100 mum demonstrated optical bandwidth of 31.3 GHz and 29.4 GHz, responsivity of 0.89 A/W and 1.16 A/W at 1550 nm, and 40 Gb/s open eye diagrams at -2V.
A systematic study of silicon nanocrystals (Si-ncs) nonlinearities at 1550 nm was carried out in view of the realization of an all optical Mach-Zehender interferometer (MZI).
Active photonic devices like efficient light emitters and high speed modulators using Si and other group IV materials are difficult to realize due to indirect nature of band gap in silicon, germanium and their alloys. At present, efficient light emission has been observed by exploiting stimulated Raman scattering in silicon that needs optical pumping. An alternate route has been found recently that...
In this paper, we demonstrate a 1550-nm photon-counting optical communications channel using pulse-position modulation and an optical receiver utilizing a periodically-poled lithium niobate wavelength converter and a silicon Geiger-mode avalanche photodiode.
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