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Fast Ge-on-Si p-i-n photodiodes are fabricated and their frequency response is measured up to 67 GHz at a wavelength of 1550 nm. At a bias voltage of -2 V, a 3-dB bandwidth (BW) of 49 GHz is achieved. This is to the best of the authors' knowledge the highest BW ever published for Ge photodiodes.
Ge waveguide photodetectors with dimension of 7.4 mum times 50 mum and 4.4 mum times 100 mum demonstrated optical bandwidth of 31.3 GHz and 29.4 GHz, responsivity of 0.89 A/W and 1.16 A/W at 1550 nm, and 40 Gb/s open eye diagrams at -2V.
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