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Static and dynamic properties of InP-based Quantum Dashes of 1.55μm directly modulated lasers are reported. Using growth and design optimization, we demonstrate linewidth enhancement factor above threshold as low as 2 and decreasing with injected current. This unique chirp behavior leads to uncompensated and non-amplified SMF 10Gb/s transmissions at a constant bias current from back-to-back up to...
We describe a combined 6 × 6 k · p and one-band effective mass modelling tool to calculate absorption spectra in Ge-SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge-SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of...
We report on the design of a silicon-based 2D slab photonic crystal that operates around telecommunication wavelength (1550 nm). The design uses a honeycomb lattice and achieves a complete photonic bandgap (PBG) for transverse-magnetic (TM) polarized light while preserving a connected pattern for efficient electrical injection. The device operation is based on a dynamic shift of the complete photonic...
Using distributed feedback laser diode (DFB-LD) in a high-speed transmission system, the chirp effect in the LD is a factor limiting transmission span length. We discussed the impact of fiber chromatic dispersion on this system performance at 10-Gb/s due to LD chirp effect. For the dispersion range of -3.51 to 2.97 ps/nmmiddotkm, negative power penalties have been observed due to the pulse compression...
The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail. A relaxation frequency up to 13.5GHz and a damping factor as low as 0.22ns are demonstrated. The origin of this drastic improvement of the dynamic properties of Quantum Dashes lasers is discussed.
The alpha parameter's impact on an injection-locked Fabry-Perot QDash laser's bandwidth is analyzed. A large alpha is a primary approach to suppress the sag in the response and increase the bandwidth under positive frequency detuning.
Summary form only given. Hybrid organic-solgel nonlinear materials are being investigated as high speed low voltage modulators. This paper provides a summary of our recent results in this area. Various design structures will be reviewed. We have also demonstrated near ~100% poling efficiency in several generations of hybrid electro-optic (EO) polymer/sol-gel waveguide modulators, using crosslinkable...
In this paper, we present the design of input-output coupler systems using two and three volume gratings with 45deg slant angle at 1550 nm wavelength. DuPont HRF-600 photopolymer is used for both producing a planar waveguide and constructing the embedded Bragg grating coupler. With 5times5 mm grating size, simulation results reveal that total system throughput will reach nearly 60% for two-grating...
We demonstrate multi wavelength processing in a broad band 1550 nm quantum dash optical amplifier. Two 10 Gbit/s signals, spectrally separated by 30 nm are individually wavelength converted via four wave mixing with no cross talk.
A modulation bandwidth up to 10 GHz in continuous wave mode operation is demonstrated using optimized 1.55 mum InAs/InP (100) quantum dashes based lasers.
Active photonic devices like efficient light emitters and high speed modulators using Si and other group IV materials are difficult to realize due to indirect nature of band gap in silicon, germanium and their alloys. At present, efficient light emission has been observed by exploiting stimulated Raman scattering in silicon that needs optical pumping. An alternate route has been found recently that...
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80??C for both 1310 nm and 1550 nm devices is demonstrated for the first time.
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