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A low-temperature scanning tunneling microscope has been used to study the (110)-cleavage surface of indium phosphide (InP) at 4.2 K. InP is a III–V compound semiconductor, and we studied the behavior of doping atoms at different bias voltages in both n- and p-type InP. In neither the n- nor the p-type InP did we observe Friedel oscillations, but the p-type InP with a Zn-dopant concentration of 2...
We report a scanning tunneling microscopy (STM) study of the rutile TiO 2 (110) surface. The surface was prepared by sputtering and annealing in an ultrahigh vacuum (UHV). After annealing to 1100K in UHV, a (1x1) surface with a terrace width of ~100 9 is obtained. The terraces are separated by monoatomic step edges running predominantly parallel to <001> and <111> type directions...
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