The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Circuit theory textbooks rely heavily on the applicability of Ohm's law, which collapses as electronic components reach micro- and nanoscale dimensions. Circuit analysis is examined in the regime where the applied voltage V is greater than the critical voltage Vc, which triggers the nonlinear behavior. The critical voltage is infinity in the Ohmic regime, but is as low as a fraction of a volt when...
In this paper a novel high output impedance, low input impedance, wide bandwidth, very simple mirror/source structure with input and output voltage requirements less than that of a simple current mirror is presented. It can be also used as variable negative impedance converter (variable-NIC) by modifying amplifier transistors' aspect ratios. The circuit's principle of operation is discussed and compared...
A fold-back current-limit circuit, with load-insensitive quiescent current characteristic for CMOS low dropout regulator (LDO), is proposed in this paper. This method has been designed in 0.35 mum CMOS technology and verified by Hspice simulation. The quiescent current of the LDO is 5.7 mA at 100-mA load condition. It is only 2.2% more than it in no-load condition, 5.58 mA. The maximum current limit...
This paper presents a 30V range `Field Balanced' Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Qgd of 1.0 nC mm-2for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 mOmega nC to around 6.40 mOmega nC. From this investigation, it has been demonstrated that the `Field Balanced' on a a Split-Gate...
A realization of the CMOS digitally controlled current follower (DC-CF) suitable for low-voltage high-frequency application is proposed. To achieve very low input resistance, it is realized using a modification of a low-input resistance stage as an input stage. To achieve the precise digital control of the current gain, the current division technique is used. The proposed DC-CF can operate with low...
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
In this work, the bulk-gate controlled circuit to improve the power supply ripple ratio (PSRR) of a Low Dropout Regulator (LDO) which deteriorates due to lowering power consumption is proposed. Designing with 0.25 mum CMOS process, the simulation results by HSPICE shown that the proposed circuit provides a high performance of PSRR even though 1/10 of the power consumption is reduced compare to the...
This paper develops a novel high-speed inter-chip serial signaling scheme with leakage shunt resistors and termination resistors between the signal trace and the ground. For given abstract topology transmission line based on the data for IBM high-end AS/400 system[1] [2], we put termination resistors at the end of receiver and adjust the shunt and termination resistors value to get the optimal distortion-less...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.