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A highly reliable interface of a self-aligned CuSiN thin layer between the Cu film and nano-porous SiC:H dielectric barrier (k = 3.8) has been developed in the present work. It is shown that when the self-aligned CuSiN barrier produced between a Cu film and a porous-SiC:H barrier, the interfacial thermal stability and the adhesion of the Cu/SiC:H film are considerable enhanced. Furthermore, this kind...
Capacitive humidity sensors were fabricated using countersunk interdigitated electrodes coated with amorphous nanostructured TiO2, SiO2, and Al2O3 thin films grown by glancing angle deposition. The capacitive response and response times for each sensor were measured. The sensor utilizing TiO2 exhibited the largest change in capacitance, increasing exponentially from ~ 1 nF to ~ 1muF for an increase...
This paper presents a new a-SiC:H copper barrier deposited by PECVD using a precursor containing a phenyl group. Dielectric constant as low as 3.2 can be obtained by conserving phenyl cycles in the thin film. Material optimisation was performed in order to obtain both low k and Cu diffusion barrier behaviours. The optimized a-SiC:H was successfully integrated in a one metal level damascene interconnection...
The electrical stability and reliability of the Trimethylsilane (3MS) based a-SiC:H (SiC) film was investigated for the first time. Capacitance-Voltage (C-V) characteristic instability was observed due to polarization at high electrical field and electron injection at low electrical field. By adding nitrogen content in the film, the dielectric constant and leakage current are reduced but the time...
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