The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Time-Dependent Dielectric Breakdown (TDDB) data for very thick (8 um) silica-based dielectrics is reported at relatively low fields (< 5 MV/cm) but at extremely high voltages (up to 4000 V). TDDB data was taken across a wide range of dielectric thicknesses ranging from 38 Aring to 8 mum (80,000 Aring). Consistent with the TDDB results generally reported for thin films, a thickness-independent effective...
A temperature-independent field acceleration parameter /spl gamma/ and a field-independent activation energy /spl Delta/Ho can result when different types of disturbed bonding states are mixed during time-dependent dielectric breakdown (TDDB) testing of SiO/sub 2/ thin films. While /spl gamma/ for each defect type alone has the expected 1/T dependence and /spl Delta/Ho shows a linear decrease with...
Time-dependent dielectric breakdown (TDDB) of MIS and MIM capacitors with Cu electrodes is investigated. The dielectric breakdown lifetime strongly depends on (1) the material and (2) the electric field strength of the dielectrics in contact with the Cu anode, while the dependence of the TDDB lifetime on the dielectric thickness and the capacitor structure (single-layer or multilayer) is small. In...
Time-dependent dielectric breakdown (TDDB) characteristics are reported for 6.5 nm, 9 nm, 15 nm, and 22 nm intrinsic silicon dioxide films stressed under dc and bipolar pulsed bias conditions for a wide range of electric fields and temperatures. Our results show that the increased lifetime observed under bipolar pulsed stress conditions diminishes as the stress electric field and oxide thickness are...
Time-Dependent Dielectric Breakdown (TDDB) data are presented for 15- and 22.5-nm oxides collected over a wide range of electric fields and temperatures. The results indicate that it is necessary to obtain data over this range to distinguish between the two field acceleration models and to quantify the electric field and temperature dependencies of the thermal activation energy and the field acceleration...
The surface roughness of Si/sub 3/N/sub 4/ films was found to become higher and to cause degradation of time-dependent dielectric breakdown (TDDB) characteristics of ONO films with increasing deposition temperature of Si/sub 3/N/sub 4/ films. A local thinning of ONO films, evaluated from the TDDB characteristics, agreed with the surface roughness measured by the atomic force microscope (AFM) and the...
Compact, low-resistance oxide-nitride-oxide (ONO) antifuses are studied for time-dependent dielectric breakdown (TDDB), program disturb, programmed antifuse resistance stability, and effective screen. ONO antifuses are superior to oxide antifuses. No ONO antifuse failures were observed in 1.8 million accelerated burn-in device-hours accumulated on 1108 product units. This is in agreement with the...
A technique is presented for determining the thinnest oxide which satisfies a given time-dependent dielectric breakdown reliability specification. The intrinsic limit for a 10-yr lifetime at 125 degrees C is estimated to be 80 A for 5.5-V operation and 50 A for 3.6-V operation. For the particular technology studies here, 150-AA oxide meets typical reliability specifications for 5.5-V operation, and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.