The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work presents a novel failure analysis technique for the dielectric charging phenomenon in electrostatically driven MEMS devices. The new reliability assessment methodology makes use of Kelvin Probe Force Microscopy (KPFM) and it targets in this specific work thin PECVD silicon nitride films for electrostatic capacitive RF MEMS switches. The proposed technique took advantage of the AFM tip to...
The present study investigates the charge trapping characteristics of Si-rich nitride thin films in detail by using the gate-sensing and channel-sensing (GSCS) method. Analytical results indicate that thicker (>7 nm) nitride thin films are fully-capturing; the trapped electrons are distributed in the center of the nitride, and the charge centroid is independent of the N/Si ratio. However, thinner...
Synthesis of Silicon Nitride thin films is important in the semiconductor industry. The properties of the films make them valuable for oxidation masks, protection and passivation barrier layers, etch stop layer and inter level insulators. In the present study, we prepared silicon nitride films with different refractive index. We used various conditions of PECVD atmosphere with the purpose of obtaining...
In this paper, design and modeling of different types of micromachined patch antennas are described. After initial design, these antenna geometries are optimized using commercial software tools and then fabricated on high resistivity silicon wafers. To start with, a thin dielectric film of silicon nitride or silicon dioxide is deposited on silicon substrates by radio frequency (RF) sputtering. After...
Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus Eps, prestress s0, and fracture strength smax of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates...
In this work phosphorus or boron ions were implanted into dielectric layer by ion implantation. The impurity energy levels are introduced into the band gap of dielectric layer, thus the scattering processes of trapped charges in the dielectric layer can be changed, which lead to the change of relaxation time. In our experiment, we focus on investigation of the mechanisms of the charge accumulation...
In this work, we compare capacitance density of MIM capacitors between PECVD Silicon Nitride (SiN) and PECVD Silicon Oxynitride (SiON). Process parameters for both dielectrics are different in term of gasses, refractive index, and dielectric constant, while thicknesses are similar. The capacitors are tested on two different test structures, which are stand alone and matching cells. The size of the...
A fabrication process for the creation of thick (tens of micrometres) silicon nitride blocks embedded in silicon wafers has been developed. This new technology allows the use of silicon nitride as dielectric material for radio frequency (RF) circuits on standard CMOS-grade silicon wafers. Measurement results show that a performance similar to that of dedicated glass substrates can be reached
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.