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The dielectrostriction effect of thermal SiO2 was experimentally studied in this paper. A beam bending method was used to apply mechanical stresses on the dielectric and the dielectric constant was characterized by the capacitance of a sandwich structure. A model for extracting the dielectrostriction coefficient, M12, was developed and special samples for the measurements were fabricated. According...
In this paper, we proposed a sealing technique for a sealing glass cap with a ceramic substrate by using silica coating liquid to increase the performance of fluid-based inclination sensor in heat-resisting and durability characteristic. The sensor was developed with one-side-electrode-type structure and propylene carbonate was used as electrolyte. The sensor uses capacitance change to detect the...
Poly-crystalline silicon carbide (polysic) Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments...
Non-linear behaviour of RF coplanar transmission lines is analyzed for various values of Si substrate resistivitiy. Based on small-signal measurements performed under different DC bias conditions, voltage dependent capacitance and conductance per unit length of the transmission line are extracted and compared for several silicon substrates. Harmonic distortion of large RF signal at 900 MHz along CPW...
The charged controlled model is presented as an effective method to simulate junction barrier schottky (JBS) silicon carbide diodes. Proven as a valuable approach for silicon devices, this model can also account for wide bandgap energy semiconductors. The model was implemented in Oread's SPICE software package using analog behavioral modelling. The simulation combines the efficiency of a traditional...
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