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Titanium-aluminum alloys were successfully used to form low resistance ohmic contacts to p-type SiC. This work concerns two Al-Ti alloy compositions. Contacts were prepared by magnetron sputtering of bilayer Al-Ti and trilayer Ti-Al-Ti thin films and rapid thermal annealing at temperatures range 900°C ÷ 1000°C. Using scanning electron microscopy and profiler, an investigation of surface morphology...
A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900°C is reported. Preliminary results revealed the following: (1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 × 1019 cm-3, with specific contact resistances ρsNd's of 7.69 × 10-4 and 5.81 × 10-4 Ω · cm2, respectively, after rapid thermal annealing (RTA),...
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