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The capability to deliver stable repeatable epitaxy optimised for breakdown, current slump, uniformity and tuned to individual foundry specifications and processes is critical to a successful supply chain in GaN RF devices. In this paper we will provide an overview of the advances at IQE Europe in the development of GaN H-FET epitaxy for RF applications. The GaN epitaxy at IQE Europe is undertaken...
In the paper, finite element methodology applied to critical thickness calculation has been presented. Semiconductor heterostructures have been applied to many electronic and optoelectronic devices. The performance and properties of epitaxial semiconductor thin film depend on the defects structure and stress-state of the film. During epitaxial growth first few layers are coherent with a substrate...
Metal organic chemical vapor deposited Gallium nitride (GaN) thin films on (111) n-Si substrate with polycrystalline β-SiC (poly-SiC), cubic β-SiC (c-SiC), and porous β-SiC (PSC) buffer layers were characterized in detail using X-ray diffraction, Fourier transform IR spectroscopy, atomic force microscope, TEM, SEM, and Raman spectrometer. The β-SiC thin film was prepared by rapid thermal chemical...
This work provides motivation and background for work on nonpolar and semipolar GaN-based materials and then highlight UCSB work on growth of nonpolar and semipolar GaN on foreign substrates and on freestanding GaN substrates. UCSB work on nonpolar and semipolar GaN lighting emitting devices, including record 405 nm LED performance, the first nonpolar and semipolar GaN-based laser diodes, the first...
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown...
Results of ESD testing (HBM and TLP) carried out on commercially available GaN LEDs grown on sapphire or silicon carbide will be presented. A non optimal design of layout leads to current crowding phenomena determining premature failure. Devices grown on SiC, adopting vertical current flow, and optimized layout and technology, achieved maximum ESD robustness in excess of 8 kV HBM, 5 A TLP.
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