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We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected...
Silicon carbide (SiC) is more favorable than Silicon (Si) to build high voltage devices due its wider band-gap and higher critical field strength. Especially, the SiC MOSFETs are finding their niche in 1 kV range, which is currently dominated by Si IGBTs. This paper aims at demonstrating high power and high frequency operation of the SiC MOSFETs, as a means to evaluate the feasibility of using SiC...
A new design approach achieving very high conversion efficiency in low-voltage high-power isolated boost dc-dc converters is presented. The transformer eddy-current and proximity effects are analyzed, demonstrating that an extensive interleaving of primary and secondary windings is needed to avoid high winding losses. The analysis of transformer leakage inductance reveals that extremely low leakage...
A 2 kW single phase PFC active IPEM (integrated power electronic module), consisting of full bridge rectifier diodes, current sensing resistor and boost converter, has been developed employing CoolMOS and SiC diodes in this paper. The electromagnetic interference mechanism in the module is demonstrated. In order to reduce the voltage spike of power devices, three different design patterns are compared...
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