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In this work, a novel edge termination device structure with multiple P-Wells enclosure in P+ floating guard rings is proposed. The device performances between conventional FGRs and proposed structures are systematically compared by 2-D device simulation and the Vbd characteristics are also verified experimentally. The Vbd achieved up to 1708V and improved 450V higher as compared to conventional FGRs,...
In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar's doping concentrations as well as widths.
In this paper, a novel power UMOSFET_ACCUFET structure, based-on 6H-SiC, has been investigated. By varying the dimensions and doping concentrations of specific regions, we have obtained optimized electric field and on-resistance. Two approaches have been applied to the simple UMOSFET structure, both of which result in lower peak electric field in the device in the blocking state.
Silicon carbide (SiC), with its high critical electric field property and the capability of operation at high temperature, has attracted much attention and shown to be a promising semiconductor material for high power devices. Some of the most widely used devices in power circuits are the JFETs and the MOSFETs. Based on characterization of high voltage 4H-SiC JFET and MOSFET, this work compares the...
SiC VJFETs are excellent candidates for reliable high power/temperature switching as they only use PN junctions in the active device area where the high electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short circuit performance, and operate at 300degC. 0.19 cm2 1200 V normally-on and 0.15 cm2 low-voltage normally- off VJFETs were fabricated. The 1200...
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