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SiC VJFETs are excellent candidates for reliable high power/temperature switching as they only use PN junctions in the active device area where the high electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short circuit performance, and operate at 300degC. 0.19 cm2 1200 V normally-on and 0.15 cm2 low-voltage normally- off VJFETs were fabricated. The 1200...
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