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The radio frequency (RF) sputtering is used as the method and the layer structured bismuth compound of SrBi4Ti4O15 + 4 wt% Bi2O3 ferroelectric ceramic is used as the target to deposit SrBi4Ti4O15 thin films. The excess Bi2O3 content is used to compensate the vaporization of Bi2O3 during the depositing process. SrBi4Ti4O15 (SBT) ferroelectric thin films are deposited on Pt/Ti/SiO2/Si under optimal...
A two-step method was used to fabricate vanadium oxide (VOX) thin films. SEM and IR transmittance spectra were employed to reveal the cross-section morphology and optical property, respectively. The surface composition was obtained using XPS. Experimental results indicated that the VOX film was stable until the grains and insulator-metal transition showed up on increasing annealing pressure or prolonging...
The dielectric study of HfO2 thin films deposited on the platinized silicon substrate using RF-sputtering deposition technique have been carried out in the metal-insulator-metal (MIM) configuration over a wide temperature (300 to 500 K) and frequency (100 Hz to 1 MHZ) ranges. The film were deposited at pre-optimized sputtering voltage of 0.8 kV, substrate bias of 80 volt and annealing temperature...
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