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Nanoselective growth of site-controlled quantum dot is reported. InAs(P)/InP QDs are grown by MOVPE on patterned substrate. Partial patterning of the substrate using a specific design taking into account the diffusion length of the active species from 0.5 μm to 200μm according to the growth conditions is done.
Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm-2.
Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010 cm-2, which represents the highest QDs density reported for nitride-based QDs.
We present a simple and robust method to fabricate three-dimensional Ag reflectors on GaN light-emitting diodes (LEDs) using SiO 2 nanospheres as the template. First, the hexagonal arrays of SiO2 nanosphere monolayer were spun-cast on a benzocyclobutene (BCB) layer, which was prepared on a sapphire surface. Then, the bottom half of the SiO2 nanospheres were embedded into the BCB layer after heating,...
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