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Highly c-axis oriented 1000 nm thick AlN films having full width at half maximum (FWHM) of the X-ray rocking curve 1.2 degrees were deposited on Mo underlayers by ac reactive magnetron sputtering at various process conditions. AFM, SEM, TEM, HR-XRD, and defect selective chemical etching were used to characterize the microstructure of the AlN films. It was found that the Ar pressure during the Mo deposition...
Aluminum nitride (AlN) thin film bulk acoustic resonator was fabricated using silicon bulk micromachining technique with highly c-axis oriented piezoelectric cell. AlN piezoelectric films were deposited on both platinum (Pt) and gold (Au) bottom electrodes under optimized sputtering condition for comparison. The measurement results of X-ray diffraction, scanning electron microscope, and atomic force...
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