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In this work a very low cost and conventional technique was used to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF).The Ge layer was deposited onto the PS by thermal evaporation.Subsequent annealing at 650°C and 750 C for 30 mins were done to drive in...
The implementation of quantum dots in third generation solar cells will be of importance to enhance current transport mechanisms and quantum tunneling effects. In this study, it was demonstrated that silicon quantum dots with diameters of 3~8 nm in an oxide matrix were successfully fabricated. The quantum dots were produced by depositing an amorphous oxide matrix with a SiO target followed by annealing...
Solid-phase crystallization (SPC) of Si thin films on glass deposited by electron-beam evaporation is compared at different annealing temperatures. Four independent film characterization methods, optical transmission microscopy, Raman and UV reflectance spectroscopy (UV-R), and X-ray diffraction (XRD), reveal that 1.4 micron thick films with n+/p-/p+ solar cell structures have the incubation times...
Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using “in-situ” X-ray diffraction...
Design and performance of a newly developed multi-wavelength, micro Raman spectroscopy system for non-contact and non-destructive characterization of semiconductor materials are introduced. The thickness and Ge content of Si1-xGex/Si were estimated from the multi-wavelength Raman measurement results and compared to those values obtained from X-ray diffraction (XRD) and X-ray reflectance (XRR) measurements...
Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.
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