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This work reports on rapid alloying and nano-structuring of Si80Ge20 alloy by spark plasma sintering (SPS). Elemental silicon (Si) and germanium (Ge) powders were ball milled for 10 h under optimized process parameters. The alloying and densification of Si80Ge20 powders were performed using SPS at temperature range of 900–1200 °C. X-ray diffraction and High resolution transmission electron microscope...
The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F/sup +/ ions within the dose range of 10/sup 12/-10/sup 14/ cm/sup -2/. The samples were characterized by PL, and their structural properties...
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