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We report the Raman, continuous-wave (CW) photoluminescence (PL) measurements of Ge(Si)/Si samples with an islands like morphology. The values of composition and elastic deformation of the self-assembled Ge(Si) nanoislands formed at 550degC were determined by Raman scattering spectroscopy. Due to larger islands size, and intermixing of Si and Ge, the PL peak is red shifted for longer time deposition...
Pseudomorphic Si1-xGex epitaxial layers have been grown on Si(100) at a low temperature using molecular beam epitaxy. Compressively strained grown layers have been characterized by high-resolution XRD, RBS and Raman spectroscopy. A 5-period SiGe/Si multiple quantum well structure has also been grown for infrared photodetector applications. The simulated and measured temperature dependent dark current...
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