The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, we report an efficient method of chemical vapour deposition, without use of any metal catalysts, for the successful synthesis of vertical graphene nanoflake films (GNFs) on Si substrate. Effects of the growth condition on the surface morphology, microstructure, and chemical composition of GNFs are characterized by using scanning electron microscopy, transmission electron microscopy,...
In this work, carbon nanotubes (CNTs) were grown on the silicon nanowires substrate with different thickness of Ni catalyst layer at temperatures 900??C using thermal chemical vapor deposition (CVD) to study their effects on surface morphology and field emission characteristics. Scanning electron microscopy (SEM) image was used to observe the surface morphology and structural properties, and Raman...
Arrays of silicon nanowire/multiwalled carbon nanotube nanocomposite have been synthesized by wet etching through electroless metal deposition and chemical vapor deposition. Vertically aligned Si nanowire arrays with controlled diameter and length were fabricated by Ag nanodendrite-assisted wet chemical etching of n-type or p-type silicon wafers using HF/AgNO3 solution. The composite structure was...
Polycrystalline diamond films have unique properties for applications in advanced electronic devices. Undoped and doped polycrystalline diamond films are deposited on p type Si (100) and n type SiC (6H) substrates at the low surface deposition temperatures of 370deg - 530degC using a microwave plasma enhanced chemical vapor deposition (MPECVD) system in which the surface temperatures during deposition...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.