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In this work a very low cost and conventional technique was used to prepare Ge nano/microstructures by means of filling the material inside porous silicon (PS) using thermal evaporator. PS was prepared by anodization of Si wafer in ethanoic hydrofluoric acid (HF).The Ge layer was deposited onto the PS by thermal evaporation.Subsequent annealing at 650°C and 750 C for 30 mins were done to drive in...
Crystalline silicon (c-Si) thin film is extremely important for low-cost, high performance Si-based devices, such as thin-film transistors and solar cells. We demonstrate that microwave irradiation onto amorphous silicon (a-Si) film on glass substrate with carbon overcoat is able to induce fast crystallization at a short annealing time, less than 300 s, 300 watt. X-ray diffraction and Raman spectroscopy...
Polycrystalline silicon still guarantees its application on solar cells as important market product until year 2050. Due to the increase of photovoltaic industry needing, technologies to produce low cost silicon will be needed. The metallurgical grade silicon (Si-GM) has been used to produce Si substrates by the atmospheric plasma thermal spray (APTS) which has the advantages of a low cost and fast...
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