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New OCT systems demand higher resolution using broadband SLDs. This paper presents a new class of SLDs based on chirped multilayered quantum dots to achieve broad spectral widths. These SLD chips and modules operating around 1.1 mum and 1.2 mum have demonstrated wide optical spectra, low spectral ripples and dips allied with record output powers crucial for signal-to-noise performance for in vivo...
For the fabrication of quantum dot (QD) distributed feedback (DFB) lasers, self-assembled InAs/InAlGaAs QDs were grown on the InP/InGaAs grating structures by a molecular beam epitaxy. Ridge-waveguide QD DFB lasers with a stripe width of 3 mum were fabricated. Single-mode lasing operation around the wavelength of 1.56 mum was successfully achieved under the pulsed and continuous-wave (CW) modes at...
In this work, InAs quantum dot infrared photodetectors (QDIPs) have been grown in this work by molecular beam epitaxy (MBE) growth for the detection of the mid-wavelength infrared radiation (MWIR). Firstly, we carried out an optimization of the growth conditions of the InAs quantum dots (QD), and later we designed and grew the device heterostructure with an active zone located between two AlGaAs barriers...
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