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A 2.45 GHz 0.18 ??m RF CMOS Class-AB power amplifier (PA) with high linearity and output power for WLAN is presented in this paper. The proposed power amplifier is implemented with a two-stage architecture which is followed by an off-chip output matching network. To improve the linearity, an integrated diode linearization circuit provides a compensation mechanism for the input capacitance variation...
Fully integrated dual-band power amplifiers with on-chip baluns for 802.11 n MIMO WLAN applications are presented. With a 3.3 v supply, the PAs produce a saturated output power of 28.3 dBm and 26.7 dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4 GHz and 5 GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25 dB is achieved at 22.4...
A fully monolithic 2times2 (2 a-band, 2 g-band) power amplifier based upon SiGe HBT process is developed for the dual band MIMO 802.11n WLAN system. In order to achieve desirable performances for the 5 GHz band and high integration level, a special through-wafer-via (TWV) process on Si wafer was developed and utilized. In this work, both a-band and g-band PAs show above 17 dBm linear power output...
In this work, a MOS based output matching network is designed and fabricated using IHP (innovations for high performance), 0.25 mum-SiGe HBT process and measured which can give 4 different impedance values. Also, a multi-band, Class-A, power amplifier (PA) has been designed with same technology and the desired output impedances for matching network are taken from the load-pull simulation results of...
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