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This paper presents a T/R (transmit/receive) module for Ka-band phased arrays using a 0.12 mum SiGe BiCMOS process. The T/R module consists of a low noise amplifier (LNA), power amplifier (PA), 4-bit phase shifter, and single-pole-double-throw (SPDT) switches. The LNA and PA are implemented using SiGe HBTs, and the phase shifter and SPDT switches are based on CMOS switches. The LNA achieves 23.5 dB...
A fully integrated SiGe-MMIC transceiver having a power amplifier (PA), a transmit/receive switch (T/R SW), and a voltage controlled oscillator (VCO) is developed for electric toll collection system (ETC) terminals. To improve the isolation between the PA and the VCO, the back-polish technique of the silicon substrate (127mum thickness) is employed. Electro-magnetic simulation shows that a MMIC of...
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