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A non-classical device structure namely self-aligned quasi-silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) field-effect transistor with pi-shaped semiconductor conductive layer (SA-piFET) is presented, seeking to improve the performance and upgrade the reliability of the SOI-based devices. Designed to equip with a SA single crystal silicon channel layer, plus a natural source/drain (S/D)...
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
A multipoint fiber-optic temperature sensor network integrated inside a power transformer for continuous monitoring of hot-spots on windings, cellulose insulations, and oil, is demonstrated and tested. The temperature sensors are based on proprietary encapsulated fiber Bragg grating (FBG) sensors and the optical interrogation unit uses a special designed narrowband high power broadband fiber source...
We present the use of swept wavelength interferometry for distributed fiber-optic temperature measurements in a nuclear reactor. The sensors consisted of 2-m segments of commercially available, single mode optical fibers. The interrogation technique is based on measuring the spectral shift of the intrinsic Rayleigh backscatter signal along the optical fiber and converting the spectral shift to temperature.
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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