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In this paper, different Static RAM (SRAM) cell structures have been analysed in deep submicron regions. A 6T, 7T, 8T and 9T SRAM cell have been compared on the basis of Static Voltage Noise Margin (SVNM), Write Trip Voltage (WTV), Static Current Noise Margin (SINM), Write Trip Current (WTI), Active Leakage Current, Cell Standby Leakage Current, Read Current and Data Retention Voltage (DRV). The recent...
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