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Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ∼2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.
We present the first triple junction multibandgap cells incorporating three intrinsic absorber layers that are all deposited by hot wire CVD (Cat-CVD). The bottom and middle cell have a microcrystalline silicon (/spl mu/c-Si:H) absorber layer and the top cell has an amorphous silicon (a-Si:H) intrinsic layer. The cells are made in the configuration stainless steel/n-i-p/n-i-p/n-i-p/ITO and do not...
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