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Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165°C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island...
Surface damage on Ge(100) due to single 20 keV Ga + ion impacts was investigated by in situ scanning tunneling microscopy (STM). Two types of damage structures were observed: the first appears as small disruptions of the surface on the scale of 1 1 nm 2 , while the second consists of large craters on the scale of 85 nm 2 . The small damage features are produced by a large...
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