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The forming/destruction mechanism of conducting filament is essential in understanding the behavior of resistance-memory device. On the basis of filamentary theory, we systematically studied the different electrical performances of both planar and vertical sandwich (metal/organic/metal) memory devices. Bias induced morphological change in gap devices are monitored using scanning electron microscopy...
Electrical characterization during focused ion beam (FIB) milling of an elementary Pt/NiO/Pt resistive memory cell is used to localize the conducting channels and to estimate the size and shape of the conducting nanofilament. A good agreement is found with cross sectional high resolution Transmission Electron Microscopy (HRTEM) images. This methodology is a potential tool to obtain in-operando electrical...
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