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Experimental results for crystalline Gd2O3-based MOS capacitors show that these layers are excellent candidates for application as very thin high-K materials replacing SiO2 in future MOS devices. First electrical characteristics of n- and p-type SOI-MOSFETs with epitaxial Gd2O3 demonstrate the general feasibility of this novel gate insulator, but thermal stability during typical CMOS annealing processes...
The electrical characteristics of thin strained-silicon-on-insulator (sSOI) wafers were evaluated, and the effects of annealing processes on the back interface states of sSOI wafers were analyzed by using the back-gated (BG) metal-oxide-semiconductor field-effect-transistor structure. The electrical characteristics of the BG MOSFET fabricated on sSOI wafers were superior to that of conventional SOI...
The effect of rapid thermal annealing (RTA) and post-RTA annealing (PRA) on the electrical characteristics of both strained Si and conventional SOI n-MOSFETs was investigated. The authors demonstrated that post-RTA heat treatment rather than typical RTA is inevitable to obtain enhanced DC characteristics in strained Si n-MOSFET. This is attributed to the suppression of channel surface roughness owing...
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