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In this paper, we report a fully analog three-way sequential power amplifiers (SPA) using 10W GaN HEMTs. The proposed three-way SPA delivers Psat of 39∼40 dBm over 2.45–2.8 GHz covering a 15.4% fractional bandwidth. The three-way SPA includes a 2:1:1 multi-way splitter, a carrier amplifier, two peaking amplifiers, and a 7:1.5:1.5 combiner for power combining. The measured three-way SPA shows 41% to...
This paper introduces a new architecture of frequency-agile Doherty power amplifier (PA)-based RF front-end. This architecture incorporates a baseband equalizer that is implemented using finite-impulse-response (FIR) digital filters to improve the performance of Doherty PAs when driven with large bandwidth and multiband wireless radios. Depending on the center frequency and bandwidth of the input...
Active harmonic loadpull measurements investigation for a 1-mm AlGaN/GaN HEMT power transistor at X-Band frequencies are in this paper reported. The paper highlights the transistor performances in terms of maximum PAE, POUT and Gain achieved at 8.7 GHz together with the application of a systematic source-/load-pull measurement procedure including wafer-mapping capability. The measurements were carried...
This paper presents the first monolithically integrated RF-power harvesting 71 GHz wireless temperature sensor node in 65nm CMOS technology, containing a monopole antenna, a 71 GHz RF power harvesting unit with storage capacitor array, an End-of-Burst monitor, a temperature sensor and an ultra-low-power transmitter at 79 GHz. At 71 GHz, the RF to DC converter achieves a power conversion efficiency...
This paper presents the application of a reconfigurable MEMS-based tuning network for the improvement of the linearity and efficiency in RF power amplifiers (PAs) under load variations. Simulations show the performance improvement of the whole system in terms of linearity and efficiency with different loads.
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