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A Ka-band power amplifier (PA) in a differential cascode topology with active biasing is designed, implemented in a 0.25 μm SiGe BiCMOS technology, and characterized. The design presents low power consumption and high Power Added Efficiency (PAE). This PA presents an output power of 12.3 dBm at P1dB with 16.5% Power Added Efficiency (PAE). The PAE peak is 17.5 % and it is centered nearby the P1dB...
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