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The homoepitaxial growth of diamond on single crystal substrates is done using microwave plasma-assisted chemical vapor deposition with a hydrogen-methane plasma. The doping of the deposited diamond with boron makes it a p-type semiconductor and with phosphorus makes it an n-type semiconductor. The doping of diamond is done to make diamond electronic devices. Diamond is of interest for electronics...
Boron-doped nanodiamond (NCD) films were synthesized on silicon substrates by microwave plasma chemical vapor deposition (MPCVD) technique. The effect of vacuum annealing on the field emission characteristics of NCD films has been investigated. The surface morphology and quality of films was characterized by scanning electron microscope (SEM) and Raman spectroscopy. The SEM images clearly reveal formation...
Vacuum electron devices such as traveling wave tubes designed to operate at frequencies near 300 GHz will require electron beam and circuit dimensions of several hundred microns and several micron precision, likely fabricated using techniques such as DRIE or LIGA. To increase power while maintaining the required dimensions such devices will require either multiple round beams, "sheet" beams,...
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