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We have studied the structure and composition of the interface of diamond thin films deposited on Si substrates by chemical vapor deposition using atomic resolution electron microscopy, and electron energy loss spectroscopy. The latter technique allows the analysis of the relative Si to C composition as well as the nature of the bonding to determine the relative sp2/sp3 content of the diamond film...
Thermal spreaders have been of interest over the last few decades. Heat pipes, Thermal Pyrolytic Graphite (TPG), and other graphite-based materials have been commonly used for enhancing the thermal performance. This study will start for a discussion of Chemical Vapor Deposition (CVD) of diamond manufacturing to enable high conductivity plates for heat spreading. Later attention will be turned to absolute...
Nanocrystalline Diamond (NCD) is a very promising material for fabrication of high-temperature devices because of its unique mechanical and electrical properties. The prospective of using diamond is not only in sensors (MEMS) but in RF and power electronic as well. The strain gauges based on nanocrystalline diamond layers have been successfully designed and fabricated using mainly domestic technological...
We here discuss the possibility of creating color centers for quantum information via incorporation of suitable defects during CVD (chemical vapor deposition) growth of diamond as well as coupling of color centers to fiber-based Fabry-Perot cavities.
The helical slow-wave circuit is an attractive choice for traveling wave tube amplifiers (TWTAs) because of its inherently large bandwidth and relatively high RF efficiency. Unfortunately, as the operational frequency increases beyond Q-or V-band, its use has been limited by conventional fabrication techniques, and by the difficulty of passing enough current through the center of such a small structure...
This study presents diamond film growth, preparation, and characterization using microwave plasma-assisted chemical vapor deposition for gyrotron window materials intended for fusion plasma ignition in magnetic and inertial confinement fusion such as ITER. A surface polishing technique is utilized to polish the films to a mirror grade surface finish. A fine-grained film surface morphology is realized...
Because of its high thermal conductivity and dielectric strength, diamond is a promising material for thermal management in high voltage, high power electronics. In this paper we present our investigation of CVD polycrystalline diamond films for heat sink applications. Dielectric strength and thermal conductivity have been measured at room temperature, for either home made or commercial samples. Though...
In this paper AlGaN/GaN high electron mobility transistor (HEMT) fabricated on diamond substrate is presented. Epitaxial AlGaN/GaN layers were first grown on high resistivity Si (111) substrate and transferred to polycrystalline diamond substrate, which was separately grown by chemical vapor deposition (CVD). It is concluded that these are the best-reported results for a transistor using GaN on diamond...
Polycrystalline chemical vapor deposited (CVD) diamond detectors are of great interest in harsh environments due to their capability to operate even at high temperature and to withstand great neutron fluencies. Their use is of interest in many fields including the nuclear fusion reactors. In this paper the successful characterization of polycrystalline CVD diamond detectors as 14 MeV neutron monitors...
Summary form only given. Diamond films are grown on the molybdenum substrate by a chemical vapor deposition (CVD) using thermal plasma jets mixed with methane and hydrogen. Morphologies of the diamond films grown under various processing conditions, such as substrate temperature and the ratio of hydrogen to methane, are evaluated by scanning electron microscopy (SEM). In addition to the diamond film...
We report the utilization of synthetic diamond grown by chemical-vapour-deposition (CVD) for use as metal-semiconductor field-effect-transistors (MESFETs). The lack of a shallow n-type donor means that diamond-based electronic devices are unipolar (p-type). The devices presented in this paper are based on delta-doping. Delta-doping stands for the use of very thin (<5 mm) highly doped (NA 1020 cm...
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