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A class-G PA consisting of a class-E PA and class-G supply modulator is fabricated in a 130 nm process. It operates from 1.65 and 3.3 V supplies and the die area is 2times2 mm. It achieves a measured Pout of 29.2 dBm with a PAE of 72%. It can amplify signals with peak-to-average ratios of ~3-20 dBm, or act as power control for constant envelope signals. It achieves an EVM value of 4.6%-rms for a root-raised...
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