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Chemical vapor deposition of thin (<10 nm) films of amorphous boron carbo-nitride (BC 0.7 N 0.08 , or BCN) on Ge(100) and Ge nanowire (GeNW) surfaces was studied to determine the ability of BCN to prevent oxidation of Ge. X-ray photoelectron spectroscopy was used to track Ge oxidation of BCN-covered Ge(100) upon exposure to ambient, 50 °C deionized water, and a 250 °C atomic layer...
We demonstrate a kinetically-driven patterning scheme to selectively position arrays of Ge or Si nanoparticles within lithographically defined HfO 2 windows. The surface reactions enabling patterning are revealed through temperature programmed desorption experiments and selectivity of the deposition is verified by X-ray photoelectron spectroscopy and scanning electron microscopy. Patterning...
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