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In this study, we proposed a method to prepare GeO 2 by treating porous Ge thin film with thermal annealing in O 2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O 2 ambient were confirmed by X-ray diffraction,...
Scanning tunneling microscopy and X-ray photoelectron spectroscopy measurements after Ge chemical vapor deposition on Si(111)-(7×7) show that no more than 2.5 bilayers of Ge can be deposited upon GeH 4 exposure at 730K [p(GeH 4 )=7×10 −5 mbar], and that the surface remains atomically flat with a high quality (5×5) reconstruction. If, however, the Si substrate is exposed to...
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